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| 1 TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES s s s s s s s Independently-Programmable Rise and Fall Times Low Output Impedance ................................ 7 Typ High Speed tR, tF ....... <30 nsec with 1000 pF Load Short Delay Times .................................... < 30 nsec Wide Operating Range .......................... 4.5V to 18V Latch-Up Protected ......... Will Withstand >500 mA Reverse Current (Either Polarity) Input Withstands Negative Swings Up to -5V GENERAL DESCRIPTION The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the output. This allows the insertion of drain-current-limiting resistors in the pull-up and/or pulldown sections, allowing the user to define the rates of rise and fall for a capacitive load; or a reduced output swing, if driving a resistive load, or to limit base current, when driving a bipolar transistor. Minimum rise and fall times, with no resistors, will be less than 30 nsec for a 1000-pF load. There is no upper limit. For driving MOSFETs in motor-control applications, where slow-ON/fast-OFF operation is desired, these devices are superior to the previously-used technique of adding a diode-resistor combination between the driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other TelCom drivers. They allow insertion of a base current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the output stage, require significantly less power at higher frequencies, and can be helpful in meeting low-power budgets. Because neither drain in an output is dependent on the other, these devices can also be used as open-drain buffer/drivers where both drains are available in one device, 1 VDD 2 3 4 5 6 7 APPLICATIONS s s s s Motor Controls Driving Bipolar Transistors Driver for Nonoverlapping Totem Poles Reach-Up/Reach-Down Driver ORDERING INFORMATION Part No. TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405COA TC4405CPA TC4405EOA TC4405EPA TC4405MJA Package 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin PDIP 8-Pin CerDIP 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin PDIP 8-Pin CerDIP Temperature Range 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C FUNCTIONAL BLOCK DIAGRAM TC4404 INVERTING 8 (6) PULL UP 7 (5) 300 mV PULL DOWN INPUT 2 (3) 4.7V TC4405 NONINVERTING GND 4 EFFECTIVE INPUT C 12 pF A (B) 8 TC4404/5-6 10/21/96 TELCOM SEMICONDUCTOR, INC. 4-219 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4405 thus minimizing chip count. Unused open drains should be returned to the supply rail that their device sources are connected to (pull-downs to ground, pull-ups to VDD), to prevent static damage. In addition, in situations where timing resistors or other means of limiting crossover currents are used, like drains may be paralleled for greater current carrying capacity. These devices are built to operate in the most demanding electrical environments. They will not latch up under any conditions within their power and voltage ratings; they are not subject to damage when up to 5V of noise spiking of either polarity occurs on their ground pin; and they can accept, without damage or logic upset, up to 1/2 amp of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV of electrostatic discharge. Package Thermal Resistance CerDIP RJ-A ............................................... 150C/W CerDIP RJ-C ................................................. 55C/W PDIP RJ-A .................................................. 125C/W PDIP RJ-C .................................................... 45C/W SOIC RJ-A .................................................. 155C/W SOIC RJ-C .................................................... 45C/W Operating Temperature Range C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Package Power Dissipation (TA 70C) Plastic ............................................................. 730mW CerDP ............................................................. 800mW SOIC ............................................................... 470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ABSOLUTE MAXIMUM RATINGS Supply Voltage ......................................................... +22V Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C ELECTRICAL CHARACTERISTICS: Symbol Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Specifications measured at TA = +25C with 4.5V VDD 18V, unless otherwise specified. Parameter Test Conditions Min 2.4 -- -1 VDD - 0.025 -- -- -- -- > 500 Typ -- -- -- -- -- 7 1.5 -- -- Max -- 0.8 1 -- 0.025 10 -- 100 -- Unit V V A V V A mA mA - 0V VIN VDD Output VOH VOL RO IPK IDC IR High Output Voltage Low Output Voltage Output Resistance IOUT = 10 mA, VDD = 18V; Any Drain Peak Output Current (Any Drain) Duty cycle < 2%, t 300sec Continuous Output Current (Any Drain) Latch-Up Protection (Any Drain) Duty cycle < 2%, t 300sec Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current 1. Switching times guaranteed by design. Switching Time (Note 1) tR tF tD1 tD2 IS NOTE: Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) -- -- -- -- -- -- 25 25 15 32 -- -- 30 30 30 50 4.5 0.4 nsec nsec nsec nsec mA Power Supply 4-220 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4405 ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range with 4.5V VDD 18V, unless otherwise specified. Min 2.4 -- - 10 VDD - 0.025 -- -- -- -- >500 1 Symbol Input VIH VIL IIN Parameter Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Test Conditions Typ -- -- -- -- -- 9 1.5 -- -- Max -- 0.8 10 -- 0.025 12 -- 100 -- Unit V V A V V A mA mA 2 3 4 5 6 7 - 0V VIN VDD Output VOH VOL RO IPK IDC IR High Output Voltage Low Output Voltage Output Resistance IOUT = 10 mA, VDD = 18V; Any Drain Peak Output Current (Any Drain) Duty cycle <2%, t 300sec Continuous Output Current (Any Drain) Latch-Up Protection (Any Drain) Duty cycle <2%, t 300sec Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current 1. Switching times guaranteed by design. Switching Time (Note 1) tR tF tD1 tD2 IS NOTE Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) -- -- -- -- -- -- -- -- -- -- -- -- 40 40 40 60 8 0.6 nsec nsec nsec nsec mA Power Supply Circuit Layout Guidelines Avoid long power supply and ground traces (added inductance causes unwanted voltage transients). Use power and ground planes wherever possible. In addition, it is advisable that low ESR bypass capacitors (4.7F or 10F PIN CONFIGURATIONS (DIP AND SOIC) VDD IN A IN B COM VDD IN A IN B COM tantalum) be placed as close to the driver as possible. The driver should be physically located as close to the device it is driving as possible to minimize the length of the output trace. 1 2 3 4 TC4404 8 7 6 5 A TOP A BOTTOM B TOP B BOTTOM 1 2 3 4 TC4404 8 7 6 5 A TOP A BOTTOM B TOP B BOTTOM VDD IN A IN B COM 1 2 3 4 TC4405 8 7 6 5 A TOP A BOTTOM B TOP B BOTTOM VDD IN A IN B COM 1 2 3 4 TC4405 8 7 6 5 A TOP A BOTTOM B TOP B BOTTOM 8 4-221 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4405 +5V INPUT 0V 18V OUTPUT 1 2,3 INPUT 1 8,7 OUTPUT CL = 1000 pF 2 +5V INPUT 0V 18V INPUT: 100 kHz, square wave, tRISE = tFALL 10 nsec tD1 OUTPUT 0V 10% NONINVERTING DRIVER Figure 1. Switching Time Test Circuit 90% 10% tD1 90% tF tD2 tR 90% VDD = 18V 4.7 F 0.1 F 0V 10% INVERTING DRIVER 10% 90% 10% 90% tR tD2 90% tF 10% 4 4-222 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4405 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage 100 2200 pF 80 tRISE (nsec) 1 Fall Time vs. Supply Voltage 100 2200 pF 100 TA = +25C 1500 pF tRISE (nsec) Rise TIme vs. Capacitive Load TA = +25C 80 VDD = 5V 2 3 TA = +25C 1500 pF tFALL (nsec) 80 60 1000 pF 40 470 pF 20 100 pF 0 4 6 8 10 12 VDD 14 16 18 60 1000 pF 40 470 pF 20 100 pF 0 60 10V 15V 40 20 4 6 8 10 12 VDD 14 16 18 0 100 1000 CLOAD (pF) 10,000 Fall Time vs. Capacitive Load 100 TA = +25C 80 tFALL (nsec) TIME (nsec) Rise and Fall Times vs. Temperature 60 60 Propagation Delay vs. Supply Voltage CLOAD = 1000 pF TA = +25C t D2 40 4 5 VDD = 5V 50 CLOAD = 1000 pF VDD = 17.5V DELAY TIME (nsec) 50 60 10V 15V 40 40 30 t FALL 20 t RISE 30 20 20 t D1 0 100 1000 CLOAD (pF) 10,000 10 -55 -35 -15 5 25 45 65 85 105 125 TEMPERATURE (C) 10 4 6 8 10 12 VDD 14 16 18 6 7 Effect of Input Amplitude on Delay Time 60 Propagation Delay Time vs. Temperature 60 10 VDD = 17.5V VLOAD = 1000 pF 50 DELAY TIME (nsec) Quiescent Supply Current vs. Voltage TA = +25C CLOAD = 1000 pF 50 DELAY TIME (nsec) IQUIESCENT (mA) VDD = 10V TA= +25C 40 30 20 10 tD2 BOTH INPUTS = 1 1 40 t D2 30 20 t D1 tD1 0.1 BOTH INPUTS = 0 10 0 2 4 6 VDRIVE (V) 8 10 -55 -35 -15 5 25 45 65 85 105 125 TEMPERATURE (C) 4 6 8 10 12 VDD 14 16 18 8 TELCOM SEMICONDUCTOR, INC. 4-223 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4405 TYPICAL CHARACTERISTICS (Cont.) Quiescent Supply Current vs. Temperature 4.0 VDD = 18V BOTH INPUTS = 1 25 Pull-Up Output Resistance Pull-Down Output Resistance 25 IQUIESCENT (mA) 3.5 20 20 R(DS(ON) () 3.0 RDS(ON) () WORST CASE @ TJ = +150C 15 WORST CASE @ TJ = +150C 15 2.5 10 8 TYP @ +25C 10 8 5 TYP @ +25C 2.0 -55 -35 -15 5 25 45 65 85 105 125 TEMPERATURE (C) 5 4 6 8 10 12 VDD 14 16 18 4 6 8 10 12 VDD 14 16 18 TYPICAL APPLICATIONS Zero Crossover Current Totem-Pole Switch VDD (4.5V-18V) VDD (4.5V - 18V) Driving Bipolar Transistors FROM TTL TC4404 RT RT VOUT FROM TTL RIB TC4405 RIB GND GND Servo Motor Control +24V 47 k +12V 15V 0.1 F DIRECTION (TTL LEVEL) RT RT 15V 0.1 F 47 k REACH-UP AND REACH-DOWN DRIVING +12V +12V SWITCHED +12V +5V +5V SPEED (PWM) MOTOR FROM TTL TC4404 GND I SENSE TC4469 GND TC4404 GND SWITCHED -12V -12V -12V 4-224 TELCOM SEMICONDUCTOR, INC. |
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